MT45W4MW16BCGB-708 WT

64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.5 Memory Features Async/Page/Burst CellularRAM® 1.5 Memory MT45W4MW16BCGB Features Figure 1: • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages: – 1.7–1.95V VCC – 1.7–3.3V VCCQ1 • Random access time: 70ns • Burst mode READ and WRITE access – 4, 8, 16, or 32 words or continuous burst – Burst wrap or sequential – MAX clock rate: 133 MHz1 (tCLK = 7.5ns) – Burst initial latency: 37.5ns (5 clocks) at 133 MHz – tACLK: 5.5ns at 133 MHz • Page mode read access – 16-word page size – Interpage read access: 70ns – Intrapage read access: 20ns • Low power consumption – Asynchronous READ: